Download e-book for iPad: Crystal growth technology by Hans J. Scheel

By Hans J. Scheel

ISBN-10: 0470871679

ISBN-13: 9780470871676

ISBN-10: 0471490598

ISBN-13: 9780471490593

ISBN-10: 0471495247

ISBN-13: 9780471495246

This quantity offers with the applied sciences of crystal fabrication, of crystal machining, and of epilayer creation and is the 1st ebook on business and medical facets of crystal and layer creation.

 The significant commercial crystals are handled: Si, GaAs, hole, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave functions and extra.

includes 29 contributions from prime crystal technologists protecting the next issues:

  • General elements of crystal development know-how
  • Silicon
  • Compound semiconductors
  • Oxides and halides
  • Crystal machining
  • Epitaxy and layer deposition

    medical and technological difficulties of creation and machining of business crystals are mentioned by way of best specialists, such a lot of them from the main development industries and crystal development facilities.

     In addition, it is going to be necessary for the clients of crystals, for academics and graduate scholars in fabrics sciences, in digital and different useful fabrics, chemical and metallurgical engineering, micro-and optoelectronics together with nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

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    Additional info for Crystal growth technology

    Example text

    J. Cryst. Growth 61, 317. Hurle D. T. J. (1987), J. Cryst. Growth 85, 1. Ivantsov G. P. (1951, 1952), Dokl. Akad. Nauk SSSR 81, 179; 83, 573. Nassau K. (1969), J. Cryst. Growth 5, 338. Nassau K. and Nassau J. (1971), Lapidary J. 24, 1284, 1442, 1524. Rytz D. and Scheel H. J. (1982), J. Cryst. Growth 59, 468. Scheel H. J. (1972), J. Cryst. Growth 13/14, 560. Scheel H. J. (1993/1994), Historical Introduction, Chapter 1 in Handbook of Crystal Growth, editor D. T. J. Hurle, Vol. 1 Elsevier, Amsterdam.

    1953. e. growth instability, can be prevented in growth from solutions by sufficient flow against or along the crystal facets: Carlson 1958 developed an empirical theory which was utilized by Scheel and Elwell 1972 to derive the maximum stable growth rate and optimized programming of supersaturation for obtaining large inclusion-free crystals. Microscopic and macroscopic inhomogeneities in doped crystals and in solid solutions are caused by segregation phenomena, which are related to mass and heat transfer.

    1953), J. Chem. Phys. 21, 1987. Capper P. (1994), Prog. Crystal Growth Charact. 28, 1. 14 Crystal Growth Technology Capper P. (2000), at second International School on Crystal Growth Technology ISCGT-2 Mount Zao, Japan August 24–29, 2000 (book in preparation). Elwell D. and Scheel H. J. (1975), Crystal Growth from High-Temperature Solutions, Academic Press, London- New York, (reprint foreseen 2003). , Makovsky J. and Ben-Dor L. (1983), J. Cryst. , Goldstein M. , J. Cryst. Growth 61, 317. Hurle D.

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