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The theoretical switching time of the device will therefore be determined by the channel length and the drift velocity of the charge carriers. For a channel length of one micron and a drift velocity for electrons of 90km/s, the theoretical switching time is 12ps [9]. This is never approached in practice because of the various parasitic capacitances associated with the die structure and stray impedances due to packaging etc. limit the rate of change of voltages and currents in the device. The limiting factor on the switching time of a MOSFET is thus determined by how fast the gate voltage can be changed and is not an inherent limitation due to the physics of operation.

The gate-driver must then sink the current injected into the gate terminal by the gate-drain capacitance as the voltage across the MOSFET rises (Miller current). The gate-driver must therefore have a low enough impedance to sink this current without the gate voltage rising high enough to turn the MOSFET back on. Chapter4. 1 Requirements of the Drive-Signal-Generator The first requirement of the drive-signal-generator is the ability two generate two drive signals of exactly the same frequency and duty cycle but are always phase shifted exactly 180º degrees relative to each other.

Surface metallisation forms the source and drain contacts together with the gate electrode. The gate electrode is separated from the p-type substrate by an insulating layer of silicon dioxide. 1. When a positive field is applied between the gate electrode and the p-type substrate by increasing the gate-source voltage, n-type charge carriers are attracted into the channel region. If the gate-source voltage is increased sufficiently, the net negative charge density at the surface of the substrate becomes greater than the positive charge density causing the surface layer to invert, becoming n-type.

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CompactPCI specification short form Rev 2.1


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